Transient voltage suppressor (TVS) and method for forming same

一种瞬间电压抑制器及形成瞬间电压抑制器的方法

Abstract

一种瞬间电压抑制器(TVS)器件,包括:第一导电类型的半导体衬底;和覆盖所述半导体衬底的第二导电类型的第一和第二半导体区域。第二导电类型的半导体层覆盖所述第一和第二半导体区域。TVS器件具有延伸通过半导体层和第一半导体区域并进入到半导体衬底中的第一沟槽;设置在所述第一沟槽中的第二导电类型的填充材料。TVS器件中的箝位二极管具有在填充材料的外扩散区域和半导体衬底的一部分之间的结。该TVS器件还包括形成在半导体层的第一部分中的第一PN二极管;和第二PN二极管,具有在第二半导体区域和半导体衬底之间的结。
The invention discloses a transient voltage suppressor (TVS) device. The TVS device comprises a semiconductor substrate of a first conduction type, and a first semiconductor area of a second conduction type and a second semiconductor area of the second conduction type, wherein the first semiconductor area of the second conduction type and the second semiconductor area of the second conduction type cover the semiconductor substrate; and a semiconductor layer of the second conduction type covers the first and second semiconductor areas. The TVS device has a first trench and a filling material of the second conduction type, wherein the first trench is extended to the semiconductor substrate through the semiconductor layer and the first semiconductor area; and the filling material of the second conduction type is arranged in the first trench. A clamping diode in the TVS device has a junction between an external diffusion area of the filling material and a part of the semiconductor substrate. The TVS device further comprises a first PN diode formed in a first part of the semiconductor layer and a second PN diode having the junction between the second semiconductor area and the semiconductor substrate.

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Patent Citations (2)

    Publication numberPublication dateAssigneeTitle
    CN-101393912-AMarch 25, 2009半导体元件工业有限责任公司形成低电容的esd器件的方法及其结构
    CN-101409287-AApril 15, 2009半导体元件工业有限责任公司多沟道esd器件及其方法

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